Electronic Packaging Science and Technology. King-Ning Tu
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Название: Electronic Packaging Science and Technology

Автор: King-Ning Tu

Издательство: John Wiley & Sons Limited

Жанр: Химия

Серия:

isbn: 9781119418337

isbn:

СКАЧАТЬ alt="Schematic illustration of an example of electromigration electromigration-induced failure of void formation in Cu interconnects. (a) Electrons drifted from the bottom Cu line to the top Cu line. (b) Electrons drifted from the top Cu line to the bottom Cu line."/>

      The following chapters will be divided into three parts. In Part I, we cover briefly the history of bonding technology in Chapter 2, starting from wire‐bonding, tab‐automated bonding (TAB), flip chip C‐4 solder joint bonding, micro‐bump bonding, Cu‐to‐Cu direct bonding, and hybrid bonding. In Chapter 3, we shall cover the structure, properties, and applications of randomly oriented and (111) unidirectionally oriented nano‐twin Cu. Then, Chapters 4 and 5 will be dedicated to chemical reactions and kinetic processes in solder joint formation. Chapter 4 will review solid–liquid interfacial diffusion (SLID) reactions between liquid solder and Cu. Chapter 5 will review solid–solid reactions between solid solder and Cu upon annealing. The kinetics of growth of IMC, which is a stoichiometric compound without composition gradient, has been an outstanding problem in the kinetic analysis of layered interfacial reactions. We introduce Wagner’s diffusivity to overcome it.

      Part II consists of three chapters related to electric circuitry in electronic packaging. The emphasis is about the design of low‐power devices and high intelligent integration. The technical issues of the need of faster rate and larger amount of data transport are discussed. How to increase the I/O density and the bandwidth in packaging technology are explained.

      In the last chapter, Chapter 14, a discussion on how to use AI to accelerate the solving of reliability problems will be explored. We propose an X‐ray‐based graphic processing unit (X‐GPU) to analyze reliability failure distribution in any newly developed 3D IC device for mass production. The goal is to change the time‐dependent and time‐consuming reliability tests to time‐independent tests.

      1 1 Chen, K.‐N. and Tu, K.N. (2015). Materials challenges in three‐dimensional integrated circuits. MRS Bulletin 40: 219–222.

      2 2 Iyer, S. (2015). Three‐dimensional integration: an industry perspective. MRS Bulletin 40: 225–232.

      3 3 Chen, C., Yu, D., and Chen, K.‐N. (2015). Vertical interconnects of microbumps in 3D integration. MRS Bulletin 40: 257–263.

      4 4 Prigogine, I. (1967). Introduction to Thermodynamics of Irreversible Processes, 3e. New York: Wiley‐Interscience.

      5 5 Tu, K.N. (2011). Chapter 10 on “Irreversible processes in interconnect and packaging technology”. In: Electronic Thin‐Film Reliability (ed. K.N. Tu). Cambridge, UK: Cambridge University Press.

      6 6 Tu, K.N., Liu, Y., and Li, M. (2017). Effect of Joule heating and current crowding on electromigration in mobile technology. Applied Physics Reviews 4: 011101.

      7 7 Tu, K.N. and Gusak, A.M. (2019). A unified model of mean‐time‐to‐failure for electromigration, thermomigration, and stress‐migration based on entropy production. Journal of Applied Physics 126: 075109.

Part I

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