Heterojunction Bipolar Transistors for Circuit Design. Microwave Modeling and Parameter Extraction. Jianjun Gao

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Название: Heterojunction Bipolar Transistors for Circuit Design. Microwave Modeling and Parameter Extraction

Автор: Jianjun Gao

Издательство: John Wiley & Sons Limited

Жанр: Техническая литература

Серия:

isbn: 9781118921548

isbn: 0

Аннотация:

A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors • Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs • Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning • Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design • Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods