Fundamentals of Solar Cell Design. Rajender Boddula
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Название: Fundamentals of Solar Cell Design

Автор: Rajender Boddula

Издательство: John Wiley & Sons Limited

Жанр: Физика

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isbn: 9781119725046

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СКАЧАТЬ The short-circuit current density in the GaAs/Si TSC achieves 37.8 mA/cm2 with experimentally possible parameters [41]. R. Lachaume et al. reported that over 30% efficiency could be achieved for the tandem with only ~7 μm of epi-SiGe and ZnO/Ag back metallization. In the latter ideal scenario, the highest efficiency achievable is ~37% with 1.1-μm-thick Al0.15Ga0.85 as top cell and epi-Si0.73Ge0.27 as bottom cell less than ~30-μm thickness [42]. Shizhao Fan et al. reported 1.7 eV/1.1 eV GaAs0.75P0.25/Si TSC having efficiency of 20.0% and 16.5% efficient GaAs0.75P0.25 single-junction top cell on Si and a 7.78% efficient GaAs0.75P0.25 filtered Si bottom cell (Figure 3.6) [43].

Schematic illustration of the fabricated 3-TGaAsP on SiGe/Si device. Schematic illustration of the GaAs nanowire-on-Si tandem solar cell.

      Colin D. Bailie et al. established semi-transparent cell onto CIGS and poor class multicrystalline Si to attain solid-state polycrystalline TSC efficiency above 25% [47]. Miguel Anaya and coauthors proposed a new tandem structural design in which both top and bottom cells are made of absorbers and devices shows the efficiencies at 35% [48]. Jiadong Qian et al. reported different degradation rates of perovskite cells and silicon cells in a tandem solar module degradation. PCE of 28.7% and 27.6% enable the economic viability of two- and four-terminal modules [49]. Alexander J. Bett et al. developed semi-transparent PSE in the regular n-i-p structure, which is presented with ITO directly sputtered on the hole conducting material Spiro-OMeTAD and showed efficiency of 14.8% [50].

Schematic illustration of (a) Absorption of thin films. (b) Normalized absorbance with respect of time.

      Figure 3.9 Schematic arrangement of the cell and its I-V characterstics. (Reprinted with the permission from reference in CC licenses [50].)

Schematic illustration of the J-V characteristics (a) J-V of CIGSe single-junction. (b) Perovskite single junction reference cell with different HTLs.

      Jialong Duan et al. fabricated FAPbX3 perovskite nanocrystals, high-melting-point ligands to modify the perovskite/carbon interface in allinorganic CsPbBr3 PSC, which are efficient PV device, and elevated PCE up to 8.55% is achieved [59]. Shichong et al. reported ICO transparent electrode with high mobility of 51.6 cm2/Vs, a low resistivity of 5.74 × 10−4 Ωcm and transmittance of 83.5%. The SHJ two-terminal TSC gets 8.06% step up in PCE from 18.85% to 20.37% [60]. Jian Liu et al. reported a two-terminal perovskite (PVSK)–organic HTSC and PFN/doped MoO3/MoO3 structure as interconnection layer (ICL). The HTSC attains VOC of 1.58V and FF of 0.68 [61].

Schematic illustration of the structure of CH3 NH3 SnxPb(1 − x)I3 PSC.