Introduction to Solid State Physics for Materials Engineers. Emil Zolotoyabko
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Название: Introduction to Solid State Physics for Materials Engineers

Автор: Emil Zolotoyabko

Издательство: John Wiley & Sons Limited

Жанр: Физика

Серия:

isbn: 9783527831593

isbn:

СКАЧАТЬ is devoted to electrical conductivity via electrons and holes in intrinsic (undoped) and doped semiconductors. In this chapter the p–n junction concept is introduced and the key phenomenon of band bending in the depletion region is analytically derived. Further, the working principles of semiconductor diodes and transistors are described, including the metal-oxide-semiconductor field-effect transistor (MOSFET).

      Chapter 7 is dedicated to contact phenomena arising at the boundary between a metal and a vacuum, as well as at the metal–semiconductor junctions (Schottky contacts). We introduce the important concept of work function and describe methods to measure it by a Kelvin probe, the photoelectric effect or angle-resolved photoemission spectroscopy (APRES). After that, thermionic emission at elevated temperatures and under electric field application is comprehensively treated, bearing in mind the upmost importance of the latter for an invention of field-emission gun.

      In Chapters 8 and 9, we discuss light (photon) interaction with materials. In Chapter 8, we describe some key issues regarding this in metals and insulators. Among them are skin effect, light reflection from metal surfaces, plasma frequency, metamaterials, and structural colors. In Chapter 9, we discuss light interaction with semiconductors. Particular topics include photovoltaics, solar cells, solid state radiation detectors, charge-coupled device (CCD), light-emitting diodes, semiconductor lasers, and photonic materials.

      The last four chapters are dedicated to cooperative (correlated) phenomena in electron and ion systems. For example, in Chapter 10, we consider superconductivity. The discussed issues include: Cooper pair formation, isotope effect, Giaever tunneling and the Josephson effect, the Meissner effect, superconductors of type I and type II, superconducting magnets, the superconducting quantum interference device (SQUID), and high temperature superconductivity.

      Chapter 11 is devoted to ferromagnetism. Sub-subjects comprise determination of atomic magnetic moments, paramagnetism and diamagnetism, the Weiss molecular field, spontaneous magnetization, exchange interaction, the Ising model, magnetic structures, the subdivision of magnetic materials into ferromagnetics, antiferromagnetics and ferrimagnetics, magnetic domains and domain walls, and giant magnetoresistance.

      Chapter 12 is called “Ferroelectricity as cooperative phenomenon.” Here we discuss the following issues: ferroelectric crystals, ferroelectric phase transitions in the framework of Landau–Ginzburg theory, dielectric permittivity near the Curie temperature, ferroelectric domains and domain walls, piezoelectric effect in ferroelectrics, and ferroelectrics-based devices.

      Other examples of cooperative phenomena in electron systems are given in Chapter 13. They include metal–insulator (Mott) transition and quantum Hall effects: integer and fractional, and topological insulators.

      Atomic order in crystals.

      Local and translational symmetries.

      Symmetry impact on physical properties in crystals.

      Wave propagation in periodic media.

      Quasi-momentum conservation law.

      Reciprocal space.

      Wave diffraction conditions.

      Degeneracy of electron energy states at the Brillouin zone boundary.

      Diffraction of valence electrons and bandgap formation.

      In contrast to liquids or gases, atoms in a solid state, in average (over time), are located at fixed atomic positions. The thermally assisted movements around them or between them are strongly limited in space (as for thermal vibrations in potential wells) or have rather low probabilities (as for long-range atomic diffusion). According to the types of the averaged long-range atomic arrangements, all solid materials can be sub-divided into the three following classes, i.e. regular crystals, amorphous materials, and quasicrystals.

Schematic illustration of the high-resolution scanning transmission electron microscopy image of atomic columns in crystalline GaSb. Cations and anions within dumbbells are separated by 0.15 nm. Schematic illustration of the structural motifs in silicon dioxide (SiO2): (a) – ordered atomic arrangement in crystalline quartz; (b) – disordered arrangement in amorphous silica. Large open circles and black filled circles indicate oxygen and silicon atoms, respectively.